Prof. Takashi Matsuoka
Tohoku University, Japan
Polarity in the growth of nitride semiconductors
Takashi Matsuoka has been a Professor, the division of physics of electronic materials in Institute for Materials Research (IMR), Tohoku University since February 2005. He started his career at Nippon Telegraph and Telephone Corporation (NTT) Photonics Laboratories, took the position as a Senior Research Engineer in 1989, and transferred to Basic Research Laboratories in 1997.
The contributions of his research cover a broad spectrum of topics in opto-electronic materials and devices; including nitride semiconductors devices, distributed feedback (DFB) lasers which are now used worldwide as light sources in optical communications systems, II-VI materials and their light- emitting devices.
His scientific papers with respect to DFB lasers and nitride semiconductors have been cited more than 500 and 1700 times, respectively. He also has experience in the fabrication of Si-on-Sapphire MOSFETs. It is worthy of special mention that he succeeded in the first-ever CW operation of InGaAsP DFB lasers, and proposed the InGaAlN system, and successfully grew InGaN for the light-emitting layer. Recently, he has found that the band-gap energy of wurtzite InN is about 0.8 eV. This result opens the door to the application of nitride semiconductors to optical communications devices. A laser diode using a quantum-well structure consisting of InN may achieve high frequency modulation, high output power, and wavelength stability at operation temperature.
He has received Best Paper Award of 10th European Conference on Optical Communication in 1984, President Award of Nippon Telegraph and Telephone Corporation in 1988, Fellow Award of The Japan Society of Applied Physics in 2014, APEX/JJAP Editorial Contribution Award of The Japan Society of Applied Physics in 2014, and Achievement Award of The Japanese Association for Crystal Growth in 2016.