Crystal Growth for Optoelectronic Device

Invited Speakers:

  • Gabriele D’Avino, ICAM – I2CAM Institute for Complex Adaptive Matter, USA
    Molecular films for organic electronics applications: insights on nucleation and growth from molecular dynamics simulations
  • Helena Alves, University of Aveiro, Portugal
    Influence of molecular organization and interactions on excitonic devices
  • Khaled Ebnalwaled, South Valley University, Egypt
    Adapting growth conditions for high performance devices
  • Michal Glowacki, Institute of Physics, PAS, Poland
    Growth of RE-doped alkaline-earth borates and silicates and their optical properties
  • Sheng-Lung Huang, National Taiwan University, Taiwan
    Cladding formation of sapphire and YAG crystalline fibers
  • Satoshi Kamiyama, Meijo University, Japan
    Growth and characterization of GaInN/GaN multi-quantum shell active layer for novel optoelectronic devices
  • Dean Liu, Shanghai Institute of Optics and Fine Mechanics, CAS, China
    Study the electro-optic characters of DKDP crystal in frequency conversion for high power laser
  • Yongjo Park, Advanced Institutes of Convergence Technology, Korea
    Growth and Optical Characteristics of GaN on Cavity-Patterned Sapphire Substrate
  • Michael Rusing, University of Paderborn, Germany
    Growth and characterization of Lithium niobate tantalate mixed crystals: A theoretical and experimental investigation
  • Kiyoshi Shimamura, National Institute for Materials Science (NIMS), Japan
    Single Crystal Phosphors for High-Power White LEDs and LDs
  • Sudhir B. Trived, Brimrose Technology Corporation, USA
    Mercurous Halide Crystals for Optoelectronic Applications
  • Shanpeng Wang, Shandong University, China
    Mid-infrared Nonlinear Optical Crystals: Bridgman Crystal Growth and Optical Properties

 

 

 

 

Workshop Chair:

Operating Organization

OAHOST
Sponsors
UESTC
IFFS
MATECSS
INRS

Springer

Important Dates

Abstract deadline: August 1, 2016 Registration for early birds: Before July 20, 2016